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 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
DESCRIPTION
The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
PACKAGE DIMENSIONS
FEATURES
* Input/Output pin distance 10.16 mm * UL recognized (File # E90700)
0.270 (6.86) 0.240 (6.10)
APPLICATIONS
* Power supply regulators * Digital logic inputs * Microprocessor inputs
SCHEMATIC
1 NC 6 1
6 1
SEATING PLANE
0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14)
6
0.200 (5.08) 0.115 (2.92)
2
5
2
5
0.154 (3.90) 0.100 (2.54)
0.004 (0.10) MIN
0.016 (0.40) 0.008 (0.20)
3
NC CNX82A.W SL5582.W
4
3
NC CNX83A.W SL5583.W
4
0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP
0 to 15 0.400 (10.16) TYP
PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. NO CONNECTION
PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE
NOTE All dimensions are in inches (millimeters)
ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Junction Temperature Total Device Power Dissipation @ TA = 25C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (1s pulse, 300pps) LED Power Dissipation @ TA = 25C Derate above 25C DETECTOR Collector-Emitter Voltage Collector-Base Voltage (CNX83A) Emitter-Collector Voltage Continuous Collector Current Detector Power Dissipation @ TA = 25C Derate above 25C Symbol TSTG TOPR TSOL TJ PD IF VR IF(pk) PD VCEO VCBO VECO IC PD Value -55 to +150 -55 to +100 260 for 10 sec 125 250 100 5.0 3.0 140 1.33 50 70 7 100 150 2.0 Units C C C C mW mA V A mW mW/C V V V mA mW mW/C
4/13/00
200024D
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
ELECTRICAL CHARACTERISTICS
(TA = 25C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Test Conditions (IF = 10 mA) (VR = 5.0 V) (IC = 1.0 mA, IF = 0) (IC = 100 A, IF = 0) (IE = 100 A, IF = 0) (VCE = 10 V, IF = 0) (VCE = 10 V, IF = 0) Collector-Emitter Dark Current (TA = 70C) (VCE = 10 V, IF = 0) (TA = 100C) Collector-Base Dark Current Capacitance Note ** Typical values at TA = 25C (VCB = 10 V) (VCE = 0 V, f = 1 MHz) ICBO CCE ICEO Symbol VF IR BVCEO BVCBO BVECO Device ALL ALL ALL CNX83A.W SL5583.W ALL ALL CNX82A.W CNX83A.W SL5582.W SL5583.W SL5582.W SL5583.W CNX83A.W SL5583.W ALL 8 50 70 7 Min Typ** 1.2 0.001 100 120 10 0.001 0.5 0.050 10 0.5 50 20 nA pF A Max 1.50 10 Unit V A V V V
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 * France 33 [0] 1.45.18.78.78 * Germany 49 [0] 89/96.30.51 * United Kingdom 44 [0] 1296 394499 * Asia/Pacific 603-7352417
4/13/00
200024D
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
TRANSFER CHARACTERISTICS
DC Characteristic (TA = 25C Unless otherwise specified.) Test Conditions (IF = 10 mA, VCE = 0.4 V) Symbol Device ALL CNX82A.W (IF = 10 mA, VCE = 5 V) CNX83A.W SL5582.W SL5583.W Current Transfer Ratio, Collector-Emitter (IF = 10 mA, VCE = 5 V) (TA = 100C) (IF = 1 mA, VCE = 5 V) (IF = 2 mA, VCE = 5 V) (IF = 2 mA, VCE = 5 V) (TA = 100C) Saturation Voltage (IF = 10 mA, IC = 4 mA) (IC = 2 mA, VCC = 5 V, RL = 100 !) Turn-on Time (IC = 2 mA, VCC = 5 V, RL = 1 k!) (IF = 16 mA, VCC = 5 V, RL = 1 k!) (IC = 2 mA, VCC = 5 V, RL = 100 !) Turn-off Time (IC = 2 mA, VCC = 5 V, RL = 1 k!) (IF = 16 mA, VCC = 5 V, RL = 1 k!) toff ton VCE(sat) CTR SL5582.W SL5583.W CNX82A.W CNX83A.W SL5582.W SL5583.W SL5582.W SL5583.W ALL ALL ALL SL5582.W SL5583.W ALL ALL SL5582.W SL5583.W 3 12 50 s Min 40 40 40 25 10 20 15 0.19 3 12 20 s 0.4 V 250 320 320 100 Typ** Max Units
%
ISOLATION CHARACTERISTICS
Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance External air gap (clearance) External tracking path (creepage) Internal plastic gap (clearance) Note ** Typical values at TA = 25C Test Conditions (II-O "#1 A, 1 min.) (VI-O = 500 VDC) (VI-O = $, f = 1 MHz) Symbol VISO RISO CISO 9.6 8.0 1.0 Min 5300 1011 0.5 Typ** Max Units Vac(rms) ! pf mm mm mm
ORDERING INFORMATION
Order Entry Identifier
.300W
Option
300
Description
VDE 0884
4/13/00
200024D
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
TYPICAL CHARACTERISTICS
2 VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE OR DC IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) 10
1.8
NORMALIZED TO: IF = 10 mA 1
1.6
1.4 TA = -55C 1.2 25C 100C 1 10 100 1000 IF, LED FORWARD CURRENT (mA)
0.1
1
0.01
0.5
1
2
5
10
20
50
IF, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current
Figure 2. Output Current versus Input Current
25 IC, COLLECTOR CURRENT (mA) IF = 10 mA 20
IC, OUTPUT COLLECTOR CURRENT (NORMALIZED)
10 7 5 NORMALIZED TO TA = 25C 2 1 0.7 0.5
15
10
5
0.2 0.1 -60 -40 -20 0 20 40 60 80 100
0 0 1 2 3 4 5 6 7 8 9 10
VCE - COLLECTOR-EMITTER VOLTAGE (V)
TA, AMBIENT TEMPERATURE (C)
Figure 3. Collector Current versus Collector-Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
ICEO, COLLECTOR-EMITTER DARK CURRENT (NORMALIZED)
1000 NORMALIZED TO: VCE = 10 V TA = 25C
20 18 16 C, CAPACITANCE (pF) 14 12 10 8 6 4 2 40 60 80 100 0 0.05 0.1 0.2 0.5 1 2 5 10 20 50 CCE CLED f = 1 MHz
100
10
VCE = 30 V
1 10V 0.1 0 20 TA, AMBIENT TEMPERATURE (C)
V, VOLTAGE (VOLTS)
Figure 5. Dark Current versus Ambient Temperature
Figure 6. Capacitance versus Voltage
4/13/00
200024D
Package Dimensions (Surface Mount) Recommended Pad Layout for Surface Mount Leadform
0.070 (1.78)
0.060 (1.52)
0.415 (10.54)
0.100 (2.54) 0.295 (7.49) 0.030 (0.76)
Note All dimensions are in inches (millimeters)
MARKING INFORMATION
1
CNX82A V XX YY K
3 4 5
2 6
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) Two digit year code, e.g., `03' Two digit work week ranging from `01' to `53' Assembly package code
Reflow Profile (Black Package, No Suffix)
300 Temperature (C) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 225 C peak
215C, 10-30 s
Time above 183C, 60-150 sec
Ramp up = 3C/sec 3.5 4 4.5
* Peak reflow temperature: 225C (package surface temperature) * Time of temperature higher than 183C for 60-150 seconds * One time soldering reflow is recommended
Time (Minute)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I13


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